advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v small size & lower profile r ds(on) 4.5m rohs compliant & halogen-free i d 3 23a description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 4 /w rthj-a maximum thermal resistance, junction-ambient 3 35 /w data and specifications subject to change without notice thermal data parameter total power dissipation operating junction temperature range -55 to 150 drain current 3 , v gs @ 10v 18.4 pulsed drain current 1 80 storage temperature range 3.57 -55 to 150 30 + 20 23 parameter drain-source voltage gate-source voltage drain current 3 , v gs @ 10v ap9430gyt-hf rating halogen-free product 201410143 1 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, lo w on-resistance and cost-effectiveness. the pmpak ? 3 x 3 package is special for dc-dc converters application and lower 1.0mm profile with backside heat sink. g d s d d d d s s s g pmpak ? 3 x 3 .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 4.5 m v gs =4.5v, i d =12a - - 7 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =5v, i d =20a - 33 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =20a - 33 53 nc q gs gate-source charge v ds =15v - 7 - nc q gd gate-drain ("miller") charge v gs =4.5v - 21 - nc t d(on) turn-on delay time v ds =15v - 18 - ns t r rise time i d =1a - 15 - ns t d(off) turn-off delay time r g =3.3 ? -60- ns t f fall time v gs =10v - 25 - ns c iss input capacitance v gs =0v - 2700 4320 pf c oss output capacitance v ds =25v - 400 - pf c rss reverse transfer capacitance f=1.0mhz - 380 - pf r g gate resistance f=1.0mhz - 1.5 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.9a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 33 - ns q rr reverse recovery charge di/dt=100a/s - 30 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap9430gyt-hf 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 85 o c/w at steady state. 2 .
a p9430gyt-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 0 0.4 0.8 1.2 1.6 2 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t a =25 o c 0 20 40 60 80 0 0.4 0.8 1.2 1.6 2 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 2.8 3.6 4.4 5.2 6 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =12a t a =25 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c i d =250ua .
ap9430gyt-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 0 102030405060 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =15v 0 1000 2000 3000 4000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thia =85 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on) .
ap9430yt-hf marking information 5 part numbe r date code (ywwsss) y last digit of the year ww week sss sequence 9430gyt ywwsss meet rohs requirement for low voltage mosfet only package code : yt .
|
